Tris(diethylamido)(tert-butylimido)tantalum(V)
Synonym: Tris(acetylacetonato)aluminium, Tris(2,4-pentanedionato)aluminium, Aluminium 2,4-pentanedionate, Al(acac)3
CAS Number 13963-57-0 | MDL Number MFCD00000013 | EC Number 237-741-6
Aluminium acetylacetonate and synthetic air were applied for the atmospheric pressure hot-wall MOCVD-growth of Al2O3 thin films on stainless steel substrates. This product was used as a precursor for the deposition of carbonaceous crystalline Al2O3 films on Si(100) by LP MOCVD, as well as on stainless steel, and TiN-coated cemented carbide substrates by LP MOCVD in the absence of oxidant gas. Al(acac)3 was applied for the growth of Al2O3 films on Si(111) substrates at varying temperatures by MOCVD. One more application is as a nontoxic and easy-to-handle precursor for the deposition of amorphous Al2O3 thin films on glass and Si(100) substrates by a low-temperature atmospheric-pressure CVD. See links below
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Safety information
UN | 3467 |
Hazardous class | 6.1 |
Packing group | II |
Pictograms | |
Signal word | DANGER |
Hazard statements | H300-H315-H319-H335 |
Precautionary statements | P261-P264-P270-P271-P280-P301 + P310-P302 + P352-P304 + P340-P305 + P351 + P338-P312-P321-P330-P332 + P313-P337 + P313-P362-P403 + P233 |
Transport description | ORGANOMETALLIC COMPOUND, SOLID, TOXIC, N.O.S. ( ALUMINIUMACETYLACETONATE) |
In TSCA registry | Yes |
Certificates of Analysis (CoA)
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External identifiers for Al(acac)3
Pubchem CID | 16683006 |
IUPAC Name | (Z)-4-bis[[(Z)-4-oxopent-2-en-2-yl]oxy]alumanyloxypent-3-en-2-one |
SMILES | [Al+3].O=C(C)\C=C(/[O-])C.[O-]\C(C)=C/C(C)=O.[O-]\C(C)=C/C(C)=O |
InchI Identifier | InChI=1S/3C5H8O2.Al/c3*1-4(6)3-5(2)7;/h3*3,6H,1-2H3;/q;;;+3/p-3/b3*4-3-; |
InchI Key | KILURZWTCGSYRE-LNTINUHCSA-K |
Known applications and external links
- M.P. Singh, G. Raghavan, A.K. Tyagi, S.A. Shivashankar, Bull. Mater. Sci., 2002, Vol.25, Iss.2, pp 163–168. Carbonaceous alumina films deposited by MOCVD from aluminium acetylacetonate: a spectroscopic ellipsometry study
- M.P Singh, S.A Shivashankar, Surf. Coat. Technology, 2002, vol. 161, Iss. 2–3, p. 135-143. Low-pressure MOCVD of Al2O3 films using aluminium acetylacetonate as precursor: nucleation and growth
- S.K. Pradhan, Ph.J. Reucroft, Y. Ko, Surf. Coat. Techn., 2004, vol. 176, Iss.3, p.382-384. Crystallinity of Al2O3 films deposited by metalorganic chemical vapor deposition
- T. Maruyama, S. Arai, Appl. Phys. Lett. 60, 322 (1992). Aluminum oxide thin films prepared by chemical vapor deposition from aluminum acetylacetonate
- Ch. Pflitsch, A. Muhsin, U. Bergmann, B. Atakan, Surf. Coat. Technology, 2006, Vol.201, Iss. 1–2, p.73-81. Growth of thin aluminium oxide films on stainless steel by MOCVD at ambient pressure and by using a hot-wall CVD-setup
With Aluminium acetylacetonate other customers often ask:
- Tris(diethylamino)aluminum(III)
- Aluminum chloride, anhydrous
- Tris(dimethylamino)aluminum
- Aluminum ethoxide
Ereztech synthesizes and sells additional AL-compounds.
To purchase AL3570 contact us at sales@ereztech.com