Electronic/Opto-Electronic Thin Films
Over the past thirty years, the success of the semiconductor industry, the commercial flagship of electronic thin films, has become ever more dependent upon CVD/ALD vapor phase processing. As feature sizes continue to scale lower and the number of device types proliferates. the variety of thin film materials to meet these challenges drives the development of an expanding array of volatile precursors.
Control over the physical and electrical characteristics of the component thin films is critical to the successful operation of these solid-state electronic devices. For Ereztech this means control over composition and assay during the manufacture of the chemical precursor, as well as a selection of state-of-the-art SS delivery vessels to preserve precursor quality to the customer’s point of use.
Ereztech’s broad portfolio of CVD/ALD precursors, along with our deep custom synthetic chemistry capability provides customers options in addressing complex material challenges in thin film device efforts. Whether it is Ta or Mn nitrite sources for dimensionless copper barriers, Grp III/V channel replacements, advanced Y, La, etc. high k gate dielectrics for MOSFETS; the myriad of compound semiconductor films associated with HEMT’s, LED’s, sensors and organic thin film transistors, or any of the other endless possibilities.
Most frequently, our customers are interested in the following compounds for these types of applications: Dicobalt Octacarbonyl, Bis(ethylcyclopentadienyl)cobalt, Tris(dimethylamino)antimony(III), Tris(2,2,6,6-tetramethyl- 3,5-heptanedionato)manganese(III), Bis(isopropylcyclopentadienyl)tungsten(IV) dihydride, (3,3-Dimethyl-1-butyne)dicobalt hexacarbonyl, 2,2,6,6-Tetramethyl-3,5-heptanedionate yttrium(III), Tris(1-methoxy-2-methyl-2-propoxy)bismuth
Please check out our extensive offering in metal, dielectric and semiconductor precursors. We welcome the opportunity to accelerate your development agenda.