Hexachlorodisilane
Synonym: 1,1,1,2,2,2-
CAS Number 13465-77-5 | MDL Number MFCD00011599 | EC Number 236-704-1
Hexachlorodisilane and atomic hydrogen have been used for Atomic layer epitaxy of Si on Ge(100). Hexachlorodisilane may be used as a reducing agent. Hexachlorodisilane may be combined with ammonia to form silicon nitride by chemical vapor deposition. A plasma-enhanced atomic layer deposition (ALD) process was developed for the growth of SiNx thin films using Si2Cl6 and NH3 plasma. See links below
Ereztech manufactures and sells this product in small and bulk volumes. Glass ampules, bottles or metal ampules or bubblers are available for packaging. For additional analytical information or details about purchasing SI5775 contact us at sales@ereztech.com
Safety information
UN | 2987 |
Hazardous class | 8 |
Packing group | II |
Pictograms | |
Signal word | DANGER |
Hazard statements | H314-H318 |
Precautionary statements | P280-P301 + P330 + P331-P303 + P361 + P353-P304 + P340 + P310-P305 + P351 + P338 + P310-P363 |
Transport description | Chlorosilanes, corrosive, n.o.s. |
In TSCA registry | Yes |
First Aid Measures
General advice | Consult a physician. Show this safety data sheet to the doctor in attendance. Move out of the dangerous area. |
Eye contact | Rinse thoroughly with plenty of water for at least 15 minutes and consult a physician. |
Skin contact | Wash off with soap and plenty of water. Consult a physician. |
Inhalation | If breathed in, move person into the fresh air. If not breathing, give artificial respiration. Consult a physician. |
If swallowed | Do NOT induce vomiting. Never give anything by mouth to an unconscious person. Rinse mouth with water. Consult a physician. |
Certificates of Analysis (CoA)
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External identifiers for HCDS
Pubchem CID | 83497 |
IUPAC Name | trichloro(trichlorosilyl)silane |
SMILES | [Si]([Si](Cl)(Cl)Cl)(Cl)(Cl)Cl |
InchI Identifier | InChI=1S/Cl6Si2/c1-7(2,3)8(4,5)6 |
InchI Key | LXEXBJXDGVGRAR-UHFFFAOYSA-N |
Known applications and external links
- D. D. Koleske, S. M. Gates Atomic layer epitaxy of Si on Ge(100) using Si2Cl6 and atomic hydrogen
- Rafaiel A. Ovanesyan, Dennis M. Hausmann, Sumit Agarwal Low-Temperature Conformal Atomic Layer Deposition of SiNx Films Using Si2Cl6 and NH3 Plasma
With Hexachlorodisilane other customers often ask:
- Silicon(IV) bromide (Tetrabromosilane)
- Bis-(t-buthylamino)silane
- Tetravinylsilane
- Silicon(IV) iodide (Tetraiodosilane)
Ereztech synthesizes and sells additional SI-compounds.
To purchase SI5775 contact us at sales@ereztech.com