Hexachlorodisilane
Synonym: 1,1,1,2,2,2-
CAS Number 13465-77-5 | MDL Number MFCD00011599 | EC Number 236-704-1
Hexachlorodisilane, also known as HCDS, 1,1,1,2,2,2-hexachlorodisilane, or disilicon hexachloride, is a highly pure compound with the molecular formula Si₂Cl₆ and a molecular weight of 268.89 g/mol. This substance, with a purity level of 99.99% confirmed by gas chromatography (GC), appears as a colorless liquid and is widely used in high-tech industries, particularly in the production of semiconductors and thin films.
Hexachlorodisilane is highly sensitive to moisture, and when exposed to air or water, it readily reacts, making it essential to handle the compound in a controlled, moisture-free environment. Its ability to decompose in the presence of moisture is one of the reasons it plays a significant role in chemical vapor deposition (CVD) processes, particularly for silicon-containing thin films in the electronics and semiconductor industries.
With its high silicon purity (99.99%-Si), hexachlorodisilane is critical for producing high-quality silicon layers used in integrated circuits, microelectronics, and other advanced applications. It serves as a precursor for silicon nitride and silicon oxide films, which are crucial materials in semiconductor manufacturing.
Handling hexachlorodisilane requires strict safety precautions due to its hazardous properties. It is classified as causing severe skin burns and eye damage (H314, H318) and must be handled with appropriate protective equipment, such as gloves, goggles, and protective clothing. The compound should be stored in tightly sealed containers in a dry, well-ventilated area, away from moisture, to prevent any unintended reactions.
Hexachlorodisilane, or disilicon hexachloride, is a highly valuable material in the chemical vapor deposition processes used in high-tech industries. Its high purity and reactivity make it an essential component in the production of advanced materials, though care must be taken to manage its moisture sensitivity and hazardous nature during handling and storage.
Hexachlorodisilane and atomic hydrogen have been used for Atomic layer epitaxy of Si on Ge(100). Hexachlorodisilane may be used as a reducing agent. Hexachlorodisilane may be combined with ammonia to form silicon nitride by chemical vapor deposition. A plasma-enhanced atomic layer deposition (ALD) process was developed for the growth of SiNx thin films using Si2Cl6 and NH3 plasma. See links below
Ereztech manufactures and sells this product in small and bulk volumes. Glass ampules, bottles or metal ampules or bubblers are available for packaging. For additional analytical information or details about purchasing SI5775 contact us at sales@ereztech.com
Safety information
| UN | 2987 |
| Hazardous class | 8 |
| Packing group | II |
| Pictograms |  |
| Signal word | DANGER |
| Hazard statements | H314-H318 |
| Precautionary statements | P280-P301 + P330 + P331-P303 + P361 + P353-P304 + P340 + P310-P305 + P351 + P338 + P310-P363 |
| Transport description | Chlorosilanes, corrosive, n.o.s. |
| In TSCA registry | Yes |
First Aid Measures
| General advice | Consult a physician. Show this safety data sheet to the doctor in attendance. Move out of the dangerous area. |
| Eye contact | Rinse thoroughly with plenty of water for at least 15 minutes and consult a physician. |
| Skin contact | Wash off with soap and plenty of water. Consult a physician. |
| Inhalation | If breathed in, move person into the fresh air. If not breathing, give artificial respiration. Consult a physician. |
| If swallowed | Do NOT induce vomiting. Never give anything by mouth to an unconscious person. Rinse mouth with water. Consult a physician. |
Certificates of Analysis (CoA)
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External identifiers for HCDS
| Pubchem CID | 83497 |
| IUPAC Name | trichloro(trichlorosilyl)silane |
| SMILES | [Si]([Si](Cl)(Cl)Cl)(Cl)(Cl)Cl |
| InchI Identifier | InChI=1S/Cl6Si2/c1-7(2,3)8(4,5)6 |
| InchI Key | LXEXBJXDGVGRAR-UHFFFAOYSA-N |
Known applications and external links
- D. D. Koleske, S. M. Gates Atomic layer epitaxy of Si on Ge(100) using Si2Cl6 and atomic hydrogen
- Rafaiel A. Ovanesyan, Dennis M. Hausmann, Sumit Agarwal Low-Temperature Conformal Atomic Layer Deposition of SiNx Films Using Si2Cl6 and NH3 Plasma
With Hexachlorodisilane other customers often ask:
- Silicon(IV) bromide (Tetrabromosilane)
- Bis-(t-buthylamino)silane
- Tetravinylsilane
- Silicon(IV) iodide (Tetraiodosilane)
Ereztech synthesizes and sells additional SI-compounds.
To purchase SI5775 contact us at sales@ereztech.com
