Trimethylbismuth
Synonym: Trimethylbismuthine, Trimethyl bismuthine, Bismuth trimethyl, TMBi, BiMe3
CAS Number 593-91-9 | EC Number 209-817-9
Trimethylbismuth, also known as TMBi or Bismuth trimethyl, is an organobismuth compound with the molecular formula C₃H₉Bi and a molecular weight of 254.08 g/mol. This compound consists of bismuth in a +3 oxidation state, coordinated with three methyl groups, creating a stable organometallic structure. Typically appearing as a colorless liquid with a purity of 99.5% (verified by elemental analysis), it is highly sensitive to air, moisture, and heat, requiring storage in a controlled, inert atmosphere.
Applications in Organic and Inorganic Synthesis
Trimethylbismuth is commonly used in metal-organic chemical vapor deposition (MOCVD) processes, especially for creating thin bismuth-containing layers. Its stability under controlled conditions and the presence of methyl groups make it a useful reagent for precisely depositing bismuth films on semiconductor surfaces, an application vital in advanced electronic manufacturing. Additionally, Trimethylbismuthine serves as a precursor in producing specialized bismuth-based materials, used in various research and high-tech industries.
Precautions for Safe Storage and Handling
With hazard classifications H225, H250, H302, H311, H314, and H318, Trimethylbismuth is flammable, pyrophoric, and potentially toxic. Due to its sensitivity, it must be handled with protective equipment, including gloves, goggles, and flame-resistant clothing. Ideal storage conditions include airtight containers under an inert gas, such as nitrogen or argon, and a cool, dry location to prevent decomposition or ignition.
Industrial and Laboratory Applications
In both industrial and research contexts, Trimethylbismuth is essential for the precise fabrication of bismuth films and other organobismuth compounds. It finds applications in material science, semiconductor technology, and chemical synthesis, where it enables the controlled addition of bismuth in various systems. Its unique properties make it particularly valuable in producing high-performance materials for electronics and specialized chemical research.
Trimethylbismuth and oxygen (O2) mixture reaction has been successfully used to grow the rod-like structures of bismuth oxide on a silicon substrate without using any catalyst. This product, trimethylgallium, and arsine were used as precursor sources for the growth of GaAsBi alloys grown on GaAs substrate by conventional metalorganic vapor phase epitaxy technique. InAs and InAsBi have been grown by atmospheric pressure organometallic vapor phase epitaxy over a broad temperature range from 600 to as low as 275° C. Trimethylindium, arsine, and trimethylbismuth were used as precursors for most experiments. See links below
Ereztech manufactures and sells this product in small and bulk volumes. Glass ampules, bottles or metal ampules or bubblers are available for packaging. For additional analytical information or details about purchasing BI3919 contact us at sales@ereztech.com
Safety information
| UN | 3399 |
| Hazardous class | 4.3 |
| Packing group | II |
| Pictograms |     |
| Signal word | DANGER |
| Hazard statements | H225-H302-H311-H314-H318 |
| Precautionary statements | P210-P233-P240-P241-P242-P243-P260-P264-P270-P280-P301+P312-P301+P330+P331-P302+P352-P303+P361+P353-P304+P340-P305+P351+P338-P310-P330-P361-P363-P370+P378-P403+P235-P405-P501 |
| Transport description | ORGANOMETALLIC SUBSTANCE, LIQUID, WATER-REACTIVE, FLAMMABLE (TRIMETHYLBISMUTH) |
| In TSCA registry | No (research and development usage only) |
Certificates of Analysis (CoA)
If you don’t see the needed lot of Trimethylbismuth below please contact customer support at sales@ereztech.com
Lot# 602-001/040 Lot# 602-001-033
External identifiers for TMBi
| Pubchem CID | 11651 |
| IUPAC Name | trimethylbismuthane |
| SMILES | C[Bi](C)C |
| InchI Identifier | InChI=1S/3CH3.Bi/h3*1H3; |
| InchI Key | AYDYYQHYLJDCDQ-UHFFFAOYSA-N |
Known applications and external links
- H.W. Kim, J.H. Myung, S.H. Shim, C. Lee. Growth of Bi2O3 rods using a trimethylbismuth and oxygen mixture. Applied Physics A volume 84, pages187–189(2006)
- Hédi Fitouri, Ahmed Rebey, Belgacem El Jani. Atmospheric-Pressure Metalorganic Vapor Phase Epitaxy of GaAsBi Alloy on GaAs Substrate. Bismuth-Containing Compounds pp 117-139
- K. Y. Ma, Z. M. Fang, R. M. Cohen, G. B. Stringfellow. Ultra-low temperature OMVPE of InAs and InAsBi. Journal of Electronic Materials volume 21, pages143–148(1992)
With Trimethylbismuth other customers often ask:
- Bis(acetato-O)triphenylbismuthine
- Bismuth (III) Bromide
- Tris(2-metoxyphenyl)bismuthine
- Tributylbismuthine
Ereztech synthesizes and sells additional BI-compounds.
To purchase BI3919 contact us at sales@ereztech.com
