Zirconium(IV) diisopropoxide bis(dimethylaminoethoxide)

Synonym: Zr(Oi-Pr)₂(dmae)₂

CAS Number 65281-23-4 

Product code	ZR1234
CAS number	65281-23-4
Assay (purity)	98%+
Purity method	by elemental analysis: % C = 42.7 % H = 8.7 %
NMR H1	conforms to structure
Form	liquid or solid
Appearance	colorless oily liquid or solid
Sensitivity	air, moisture
Molecular formula	C14H34O4N2Zr
Linear formula	Zr(OC3H7)2[OCH2CH2N(CH3)2]2
Packaging	glassware/metal containers/bubblers

Zirconium(IV) diisopropoxide bis(dimethylaminoethoxide) is the zirconium aminoalkoxide precursor that was used for growing zirconium dioxide (ZrO₂) thin films by alternate surface reactions between new aminoalkoxides and water by the Atomic Layer Deposition (ALD). See links below

Ereztech manufactures and sells this product in small and bulk volumes. Glass ampules, bottles or metal ampules or bubblers are available for packaging. For additional analytical information or details about purchasing ZR1234 contact us at sales@ereztech.com

Safety information

UN	Not regulated
Hazardous class	Not regulated
Packing group	Not regulated
Pictograms
Signal word	WARNING
Hazard statements	H315-H319-H335
Precautionary statements	P261-P264-P271-P280-P302 + P352-P304 + P340-P305 + P351 + P338-P312-P332 + P313-P337 + P313-P362
Transport description	NONH for all modes of transport
In TSCA registry	No (research and development usage only)

 

Certificates of Analysis (CoA)

If you don’t see the needed lot of Zirconium(IV) diisopropoxide bis(dimethylaminoethoxide) below please contact customer support at sales@ereztech.com

Lot# 015/824

Known applications and external links

• Matero, R., Ritala, M., Leskelä, M., Sajavaara, T., Jones, A.C. and Roberts, J.L. Evaluation of New Aminoalkoxide Precursors for Atomic Layer Deposition — Growth of ZrO2 Thin Films and Reaction Mechanism Studies Chemistry of Materials
• Raija Matero. Atomic Layer Deposition of Oxide Films – Growth, Characterisation and Reaction Mechanism Studies
• Anthony C. Jones , Helen C. Aspinall , Paul R. Chalker , Richard J. Potter , Troy D. Manning , Yim Fun Loo , Ruairi O’Kane , Jeffrey M. Gaskell , Lesley M. Smith. MOCVD and ALD of High- j DielectricOxides Using Alkoxide Precursors
• Jaakko Niinistö. ATOMIC LAYER DEPOSITION OF HIGH-k DIELECTRICS FROM NOVEL CYCLOPENTADIENYL-TYPE PRECURSORS

With Zirconium(IV) diisopropoxide bis(dimethylaminoethoxide) other customers often ask:

• [Dimethylbis(cyclopentadienyl)silyl]zirconium dichloride
• Zirconium(IV)isopropoxide
• Zirconium(IV)ethoxide
• Zirconium tetrakis(2,2,6,6-tetramethyl- 3,5-heptanedionate)

Ereztech synthesizes and sells additional ZR-compounds.

To purchase ZR1234 contact us at sales@ereztech.com