Di-tert-butylsilane
Synonym: Bis(2-methyl-2-propanyl)silane, Di-t-butylsilane, (tBu)2SiH2, DTBSi
CAS Number 30736-07-3 | MDL Number MFCD00270996 | EC Number 629-681-8
Di-t-butylsilane has been used as a precursor for n-doping during MOVPE growth of GaAs-based material systems, f.e. high-Al content (AlGa)As layerstacks (xAl > 0.8). Si-doping profile 2x10E18 has been achieved. See links below
Ereztech manufactures and sells this product in small and bulk volumes. Glass ampules, bottles or metal ampules or bubblers are available for packaging. For additional analytical information or details about purchasing SI6073 contact us at sales@ereztech.com
Safety information
UN | 1993 |
Hazardous class | 3 |
Packing group | II |
Pictograms | |
Signal word | DANGER |
Hazard statements | H225 |
Precautionary statements | P210-P233-P240-P241-P242-P243-P280-P303 + P361 + P353-P370 + P378-P403 + P235 |
Transport description | FLAMMABLE LIQUID, N.O.S. (DI-TERT-BUTYLSILAN) |
In TSCA registry | Yes |
Certificates of Analysis (CoA)
If you don’t see the needed lot of SI6073 below please contact customer support at sales@ereztech.com
Lot# CS09042001 Lot# CS09042002 Lot# CS09042003
External identifiers for DTBSi
Pubchem CID | 2758052 |
IUPAC Name | ditert-butylsilane |
SMILES | CC(C)(C)[SiH2]C(C)(C)C |
InchI Identifier | InChI=1S/C8H20Si/c1-7(2,3)9-8(4,5)6/h9H2,1-6H3 |
InchI Key | ZLKSBZCITVUTSN-UHFFFAOYSA-N |
Known applications and external links
- Christoph Gutsche, Andrey Lysov, Ingo Regolin, Kai Blekker, Werner Prost, Franz-Josef Tegude. n-Type Doping of Vapor–Liquid–Solid Grown GaAs Nanowires. Nanoscale Research Letters 6, Article number: 65 (2011)
- Christoph GutscheIngo, RegolinAndrey Lysov, Kai Blekker, Quoc-Thai Do, Werner Prost, Franz-Josef Tegude. III/V Nanowires for Electronic and Optoelectronic Applications. Nanoparticles from the Gasphase pp 357-385
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Ereztech synthesizes and sells additional SI-compounds.
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