Tris(ethylcyclopentadienyl)yttrium
Synonym: Y(EtCp)3, Tris(2-ethyl-2,4-cyclopentadienyl) yttrium
CAS Number 476364-59-7 | EC Number 810-917-5
Tris(ethylcyclopentadienyl)yttrium,combined with H2O vapor as oxygen source, was used for the deposition of yttria Y2O3 thin films on Si by ALD; the precursor evaporation conditions were 120°C/ 0.6-2 mbar. Film growth kinetics was investigated; the growth rate was constant with number of deposition cycles, at optimal ALD conditions being 1.7±0.1 Å/cycle. However, the gradual increase in growth rate was observed when increasing the reactor temperature from 200 to 400°C, with a narrow plateau at ca.~250–285°C. Y2O3 films were stoichiometric with no detectable C contamination as per XPS data); as-deposited Y2O3 layers were polycrystalline (according to glancing incidence XRD). See links below
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Safety information
UN | 3395 |
Hazardous class | 4.3 |
Packing group | II |
Pictogram | |
Signal word | DANGER |
Hazard statements | H228-H261 |
Precautionary statements | P210-P223-P231 + P232-p240-P241-P280 |
Transport description | ORGANOMETALLIC SUBSTANCE, SOLID, WATER-REACTIVE (TRIS (ETHYLCYCLOPENTADIENYL) YTTRIUM) |
In TSCA registry | No, sold for research and development usage only |
First Aid Measures
General advice | Consult a physician. Show this safety data sheet to the doctor in attendance. Move out of the dangerous area. |
Eye contact | Rinse thoroughly with plenty of water for at least 15 minutes and consult a physician. |
Skin contact | Wash off with soap and plenty of water. Consult a physician. |
Inhalation | If breathed in, move person into the fresh air. If not breathing, give artificial respiration. Consult a physician. |
If swallowed | Do NOT induce vomiting. Never give anything by mouth to an unconscious person. Rinse mouth with water. Consult a physician. |
Certificates of Analysis (CoA)
Lot#031/357 Lot# 031/391 Lot# 031/434
External identifiers for Y(EtCp)3
Pubchem CID | 101468254 |
SMILES | CCC1=CC=C[CH]1.CCC1=CC=C[CH]1.CCC1=CC=C[CH]1.[Y] |
IUPAC Name | 1-ethylcyclopenta-1,3-diene; yttrium |
InchI Identifier | InChI=1S/3C7H9.Y/c3*1-2-7-5-3-4-6-7;/h3*3-6H,2H2,1H3; |
InchI Key | JHFCTJHPQRVPAJ-UHFFFAOYSA-N |
Known applications and external links
- Prodyut Majumder, Gregory Jursich, Adam Kueltzo, Christos Takoudis. Atomic Layer Deposition of Y[sub 2]O[sub 3] Films on Silicon Using Tris(ethylcyclopentadienyl) Yttrium Precursor and Water Vapor. Journal of The Electrochemical Society 2008, 155, G152. DOI: 10.1149/1.2929825.
- Prodyut Majumder, Gregory Jursich, Adam Kueltzo, Christos Takoudis, J. Electrochem. Soc., Volume 155, Issue 8, pp. G152-G158 (2008) Atomic Layer Deposition of Y2O3 Films on Silicon Using Tris(ethylcyclopentadienyl) Yttrium Precursor and Water Vapor
With Yttrium Ethylcyclopentadienyl other customers often ask:
- Tris(cyclopentadienyl)yttrium(III)
- Tris(methylcyclopentadienyl)yttrium(III)
- Tris(n-butylcyclopentadienyl)yttrium(III)
- Tris(isopropylcyclopentadienyl)yttrium(III)
Ereztech synthesizes and sells additional Y-compounds.
To purchase Tris(ethylcyclopentadienyl)yttrium CAS 476364-59-7 contact us at sales@ereztech.com