Tris(diethylamido)(tert-butylimido)tantalum(V)
Synonym: Tris(diethylamino)(tert-butylimino)tantalum(V), Tantalum tris(diethylamido)-tert-butylimide, Tert-Butylimido Tris(DiEthylamino) Tantalum, TBTDET
CAS Number 169896-41-7 | MDL Number MFCD02684506 | EC Number 624-910-8
Tris(diethylamido)(tert-butylimido)tantalum(V) was involved as a precursor in the atomic layer deposition of films, including a new route for selective deposition of thin oxide by atomic layer deposition. Plasma-enhanced ALD (PE-ALD) is considered to be very promising for the deposition of high-quality, stable, and conductive tantalum-based films. The reactants for the thALD TaxNy barrier layer deposition at 250 °C were TBTDET as precursor and ammonia as co-reactant. A novel plasma-enhanced atomic layer deposition-grown mixed-phase/nanolaminate Ru–TaN barrier has been investigated, and it was confirmed that the copper diffusion barrier and direct-plate characteristics of the mixed-phase barrier can be modulated by varying the metal ratio in the film. See links below
Ereztech manufactures and sells this product in small and bulk volumes. Glass ampules, bottles or metal ampules or bubblers are available for packaging. For additional analytical information or details about purchasing TA6417 contact us at sales@ereztech.com
Safety information
| UN | 3399 |
| Hazardous class | 4.3(3) |
| Packing group | II |
| Pictograms |   |
| Signal word | DANGER |
| Hazard statements | H226-H261-H314-H318 |
| Precautionary statements | P210-P223-P231 + P232-P240-P241-P242-P243-P264-P280-P301 + P330 + P331-P303 + P361 + P353-P304 + P340-P305 + P351 + P338-P310-P334 + P335-P363-P370 + P378 |
| Transport description | Organometallic substance, liquid, water-reactive, flammable (Tris(diethylamido)(tert- butylimido) tantalum(V) |
| In TSCA registry | No (research and development usage only) |
First Aid Measures
| General advice | Consult a physician. Show this safety data sheet to the doctor in attendance. Move out of the dangerous area. |
| Eye contact | Rinse thoroughly with plenty of water for at least 15 minutes and consult a physician. |
| Skin contact | Wash off with soap and plenty of water. Consult a physician. |
| Inhalation | If breathed in, move person into the fresh air. If not breathing, give artificial respiration. Consult a physician. |
| If swallowed | Do NOT induce vomiting. Never give anything by mouth to an unconscious person. Rinse mouth with water. Consult a physician. |
Certificates of Analysis (CoA)
If you don’t see the needed lot of Tris(diethylamido)(tert-butylimido)tantalum(V) below please contact customer support at sales@ereztech.com
Lot# 031/348 Lot# 030/143 Lot# 003/661
External identifiers for TBTDET
| Pubchem CID | 4100858 |
| IUPAC Name | tert-butyliminotantalum;diethylazanide |
| SMILES | CC[N-]CC.CC[N-]CC.CC[N-]CC.CC(C)(C)N=[Ta] |
| InchI Identifier | InChI=1S/C4H9N.3C4H10N.Ta/c1-4(2,3)5;3*1-3-5-4-2;/h1-3H3;3*3-4H2,1-2H3;/q;3*-1; |
| InchI Key | OAUVVCYTHMBYBP-UHFFFAOYSA-N |
Known applications and external links
- Suk-Hoon Kim, Moon-Kyun Song, Shi-Woo Rhee Chemical Reaction Mechanism in the Atomic Layer Deposition of TaC x N y Films Using t e r t-Butylimidotris(diethylamido)tantalum
- Sebastian Killge, Johanna Reif, Volker Neumann, Marcel Junige, Marion Geidel, C. Wenzel, Martin Knaut, Matthias Albert, Johann W. Bartha High-aspect-ratio TSVs with thALD/PEALD tantalum-based barrier layer, thALD Ruthenium seed layer and subsequent copper electroplating
With Tris(diethylamido)(tert-butylimido)tantalum(V) other customers often ask:
- Pentakis(dimethylamino)tantalum(V)
- Tantalum(V) butoxide
- Tantalum (V) ethoxide
- Tantalum tetraethoxy dimethylaminoethoxide
Ereztech synthesizes and sells additional TA-compounds.
To purchase TA6417 contact us at sales@ereztech.com
